Infineon IPP034NE7N3 G OptiMOS 3 功率晶体管 N沟道 75V 100A TO220-3 OptiMOS 3

Width: 4.4 mm

Height: 15.65 mm

Length: 10 mm

Fall Time: 10 ns

Rise Time: 85 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 88 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 214 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 150 S, 75 S

Rds On - Drain-Source Resistance: 3.4 mOhms

Vds - Drain-Source Breakdown Voltage: 75 V

Vgs th - Gate-Source Threshold Voltage: 3.1 V