Infineon IPP100N10S305AKSA2 MOSFETs MOSFET_(75V 120V(

Fall Time: 20 ns

Rise Time: 17 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 135 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 34 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V