Infineon IPS80R2K0P7AKMA1 MOSFET

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 9nC

Power consumption: 24W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 800V

Continuous drain current: 3A

Input Capacitance (Ciss): 175pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V