Infineon IRF100P218XKMA1 MOSFET

Vgs(th): 3.8 V

Vgs (Max): 20V

Gate Charge (Qg): 555nC

Power consumption: 556W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 209A

Input Capacitance (Ciss): 25000pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.28mOhm

Drive Voltage (Max Rds On, Min Rds On): 6|10V

Datasheet