Infineon IRF4905LPBF MOSFETs MOSFT P沟道 -55V -74A 20毫欧 120纳库仑

Width: 4.5 mm

Height: 9.45 mm

Length: 10.2 mm

Technology: Si

Unit Weight: 2.387 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 180 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 170 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 2 V