Infineon IRF6100 Trans MOSFET P-CH 20V 5.1A 4-Pin FlipFET

Type: Power MOSFET

Vgs(th): 1.2 V

Vgs (Max): 12V

Gate Charge (Qg): 21nC

Power consumption: 2.2W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 5.1A

Input Capacitance (Ciss): 1230pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 65mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V

Datasheet