Infineon IRF6635 Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MX T/R

Type: Power MOSFET

Vgs(th): 2.35 V

Vgs (Max): 20V

Gate Charge (Qg): 71nC

Power consumption: 2.8|89W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 32A/180A

Input Capacitance (Ciss): 5970pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.8mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V