Infineon IRF7316TRPBF MOSFETs MOSFT 双P沟道 -30V 4.9A

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 32 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 540 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 23 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 34 ns

Id - Continuous Drain Current: 4.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.7 S

Rds On - Drain-Source Resistance: 76 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V