Infineon IRF8308MTR1PBF Power MOSFET

Type: Power MOSFET

Vgs(th): 2.35 V

Vgs (Max): 20V

Gate Charge (Qg): 42nC

Power consumption: 2.8|89W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 27A/150A

Input Capacitance (Ciss): 4404pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet