Infineon IRFB5615PBFXKMA1 沟槽型MOSFET >=100V

Fall Time: 13.1 ns

Rise Time: 23.1 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 26 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 144 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.9 ns

Typical Turn-Off Delay Time: 17.2 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 39 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 5 V