Infineon IRG4IBC10UDPBF IGBT晶体管 600V 超高速 8-60kHz

Width: 4.8 mm

Height: 9.1 mm

Length: 10.6 mm

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 25 W

Maximum Gate Emitter Voltage: - 20 V, + 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.61 V

Continuous Collector Current at 25 C: 6.8 A