Infineon IRGS10B60KDPBF IGBT晶体管 600V 超高速 10-30KHZ 共封装IGBT

Width: 9.65 mm

Height: 4.83 mm

Length: 10.67 mm

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 156 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 35 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 35 A