Infineon IRL6372TRPBF MOSFET 双通道 MOSFT 8.1A 2.5V 18mOhm 驱动能力

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Technology: Si

Unit Weight: 540 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 8.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17.9 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V