Infineon ISA220280C03LMDSXTMA1 MOSFETs OptiMOS 双电源MOSFET 30V

Fall Time: 3.4 ns, 9 ns

Rise Time: 3.4 ns, 8.1 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 8.9 nC, 7.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.2 ns, 12 ns

Typical Turn-Off Delay Time: 5.8 ns, 15 ns

Id - Continuous Drain Current: 8.1 A, 8.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8.5 S, 10 S

Rds On - Drain-Source Resistance: 22 mOhms, 28 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V