Infineon S29GL01GP11TFIR20 NOR闪存并行3V/3.3V 1Gbit 128M/64M x 8bit/16bit 110ns 56针TSOP托盘

Density: 1 Gbit

Package: 56TSOP

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

MSL Level: MSL 3 - 168 hours

Pin Count: 56

Boot Block: No

Interfaces: Parallel

Access Time: 110 ns

ECC Support: No

Lead Finish: Matte Tin

No. of Pins: 56

Architecture: Sectored

Interface Type: Parallel

Memory Density: 1 Gbit

OE Access Time: 25 ns

Number of Words: 128, 64 MWords

Program Current: 90 mA

Screening Level: Industrial

Supplier Package: TSOP

Address Bus Width: 27, 26 Bit

Page Read Current: 10 mA

Block Organization: Symmetrical

Maximum Erase Time: 2048/Chip s

Product Dimensions: 14 x 18.4 x 1 mm

Supply Voltage Nom: 3, 3.3 V

Max Processing Temp: 260

Programming Voltage: 3 to 3.6 V

Operating Temperature: -40 to 85 °C

Number of Bits per Word: 8, 16 Bit

Maximum Page Access Time: 25 ns

Maximum Programming Time: 984000/Chip ms

Maximum Operating Current: 110 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 110 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3, 3.3 V

Erase Suspend/Resume Modes Support: Yes

Datasheet