Infineon SGB02N60 IGBT晶体管 FAST IGBT NPT TECH 600V 2A

Width: 9.25 mm

Height: 4.4 mm

Length: 10 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 30 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 6 A

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 6 A