Infineon SGW20N60HS IGBT晶体管 高速NPT技术 600V 20A

Width: 5.3 mm

Height: 20.95 mm

Length: 15.9 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 179 W

Maximum Gate Emitter Voltage: - 20 V, + 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 36 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 40 A