No. of Pins: 15
Channel Type: N Channel
Product Range: HEXFET Series
Power Dissipation: 125 W
Transistor Mounting: Surface Mount
Transistor Case Style: DirectFET L8
Drain Source Voltage Vds: 100 V
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 124 A
Drain Source On State Resistance: 3.5 mOhm
Gate Source Threshold Voltage Max: 4 V
快速支持
直接联系认证专家

