Infineon SP001571310 功率MOSFET，N沟道，100V，9.5A，0.2欧姆，TO-220AB，穿孔安装

No. of Pins: 3

Channel Type: N Channel

Product Range: HEXFET Series

Power Dissipation: 48 W

Transistor Mounting: Through Hole

Transistor Case Style: TO-220AB

Drain Source Voltage Vds: 100 V

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 9.7 A

Drain Source On State Resistance: 200 mOhm

Gate Source Threshold Voltage Max: 4 V

Datasheet