Infineon SPP18P06P H MOSFETs P型 -60V -18.7A TO220-3

Width: 4.4 mm

Height: 15.65 mm

Length: 10 mm

Fall Time: 11 ns

Rise Time: 5.8 nS

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 21 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 81.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-Off Delay Time: 25 nS

Id - Continuous Drain Current: 18.7 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 130 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V