InterFET 2N2608 JFET P型沟道 30V 低输入电容

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: 4 V

Drain-Source Current at Vgs=0: - 4.5 mA

Id - Continuous Drain Current: 5 mA

Forward Transconductance - Min: 1 mS

Vgs - Gate-Source Breakdown Voltage: - 30 V

Vds - Drain-Source Breakdown Voltage: - 10 V