InterFET 2N3954 JFET JFET N沟道（双通道）-50V 低Ciss

Technology: Si

Unit Weight: 8.025 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 mW

Gate-Source Cutoff Voltage: - 4.5 V

Drain-Source Current at Vgs=0: 5 mA

Id - Continuous Drain Current: 200 uA

Forward Transconductance - Min: 1000 uS

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 20 V