InterFET 2N4117A JFET JFET N沟道 -40V 低Ciss

Technology: Si

Unit Weight: 667.857 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 1.8 V

Drain-Source Current at Vgs=0: 90 uA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 70 uS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 10 V