InterFET 2N4416 JFET JFET N沟道 -30V 低Ciss

Technology: Si

Unit Weight: 2.442 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 15 mA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 4000 uS

Vgs - Gate-Source Breakdown Voltage: - 30 V

Vds - Drain-Source Breakdown Voltage: 15 V