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Technology: Si
Unit Weight: 572.200 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.8 W
Gate-Source Cutoff Voltage: - 4 V
Drain-Source Current at Vgs=0: 80 mA
Id - Continuous Drain Current: 500 pA
Rds On - Drain-Source Resistance: 60 Ohms
Vgs - Gate-Source Breakdown Voltage: - 40 V
Vds - Drain-Source Breakdown Voltage: 15 V
