InterFET 2N5020 JFET P型沟道 25V 低输入电容

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW (1/2 W)

Gate-Source Cutoff Voltage: 1.5 V

Drain-Source Current at Vgs=0: - 1.2 mA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 1 mS

Vgs - Gate-Source Breakdown Voltage: 25 V

Vds - Drain-Source Breakdown Voltage: - 15 V