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Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Pd - Power Dissipation: 500 mW (1/2 W)
Gate-Source Cutoff Voltage: 10 V
Drain-Source Current at Vgs=0: - 90 mA
Id - Continuous Drain Current: - 15 mA
Rds On - Drain-Source Resistance: 75 Ohms
Vgs - Gate-Source Breakdown Voltage: 30 V
Vds - Drain-Source Breakdown Voltage: - 15 V
