Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 800 mW
Gate-Source Cutoff Voltage: - 15 V
Vgs - Gate-Source Breakdown Voltage: - 200 V
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 800 mW
Gate-Source Cutoff Voltage: - 15 V
Vgs - Gate-Source Breakdown Voltage: - 200 V
直接联系认证专家