InterFET 2N6451 JFET JFET N沟道 -20V 低噪声

Technology: Si

Unit Weight: 4.885 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 3.5 V

Drain-Source Current at Vgs=0: 20 mA

Id - Continuous Drain Current: 500 pA

Forward Transconductance - Min: 15 mS

Vgs - Gate-Source Breakdown Voltage: - 20 V

Vds - Drain-Source Breakdown Voltage: 10 V