InterFET IF1322AS08 JFET JFET N沟道（双通道）-20V低噪声

Technology: Si

Unit Weight: 540 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 480 mW

Gate-Source Cutoff Voltage: - 1.5 V

Drain-Source Current at Vgs=0: 25 mA

Id - Continuous Drain Current: 1 uA

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 0.01 mS

Vgs - Gate-Source Breakdown Voltage: - 20 V

Vds - Drain-Source Breakdown Voltage: 10 V