InterFET IF140AT72 JFET JFET N沟道 -20V 低Ciss

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 mW

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 15 mA

Id - Continuous Drain Current: 50 uA

Forward Transconductance - Min: 4.5 mS

Vgs - Gate-Source Breakdown Voltage: - 20 V

Vds - Drain-Source Breakdown Voltage: 15 V