InterFET IF170AST3 JFETs JFET N沟道 -30V 低噪声

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 2 V

Drain-Source Current at Vgs=0: 6.5 mA

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 135 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14 mS

Vgs - Gate-Source Breakdown Voltage: - 30 V

Vds - Drain-Source Breakdown Voltage: 10 V