InterFET IFD89T72 JFET JFET N沟道 -15V 低Ciss

Technology: Si

Unit Weight: 20 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 mW

Gate-Source Cutoff Voltage: - 900 mV

Drain-Source Current at Vgs=0: 1 mA

Id - Continuous Drain Current: 1 uA

Forward Transconductance - Min: 600 uS

Rds On - Drain-Source Resistance: 3 kOhms

Vgs - Gate-Source Breakdown Voltage: - 15 V

Vds - Drain-Source Breakdown Voltage: 3.3 V