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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 5.5 V
Drain-Source Current at Vgs=0: - 2 mA
Id - Continuous Drain Current: - 10 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4 mS
Rds On - Drain-Source Resistance: 300 Ohms
Vgs - Gate-Source Breakdown Voltage: 25 V
