InterFET IFN3994 JFET P型 25V 低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: 5.5 V

Drain-Source Current at Vgs=0: - 2 mA

Id - Continuous Drain Current: - 10 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4 mS

Rds On - Drain-Source Resistance: 300 Ohms

Vgs - Gate-Source Breakdown Voltage: 25 V