InterFET IFN5432 JFET JFET N沟道 -25V 低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 10 V

Drain-Source Current at Vgs=0: 150 mA

Id - Continuous Drain Current: 10 mA

Rds On - Drain-Source Resistance: 5 Ohms

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 15 V