InterFET IFN5564 JFET JFET N沟道（双通道）-40V 低噪声
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ModelIFN5564
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Technology: Si
Unit Weight: 5.030 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 650 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 30 mA
Forward Transconductance - Min: 7000 uhmo
Rds On - Drain-Source Resistance: 100 Ohms
Vgs - Gate-Source Breakdown Voltage: - 40 V
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