InterFET IFNU401 JFETs JFET N沟道（双通道）-50V 低输入电容

Technology: Si

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 500 mV to - 2.5 V

Drain-Source Current at Vgs=0: 10 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 mS

Vgs - Gate-Source Breakdown Voltage: - 50 V