InterFET IFNU406 JFET JFET N沟道（双通道）-50V 低Ciss
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ModelIFNU406
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Technology: Si
Unit Weight: 2.384 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 2.5 V
Drain-Source Current at Vgs=0: 10 mA
Id - Continuous Drain Current: 200 uA
Forward Transconductance - Min: 0.5 mS
Vgs - Gate-Source Breakdown Voltage: - 50 V
Vds - Drain-Source Breakdown Voltage: 15 V
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