InterFET IFNU426 JFET JFET N沟道（双通道）-40V 低Ciss
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ModelIFNU426
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Technology: Si
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 750 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 1.8 mA
Forward Transconductance - Min: 100 uS
Vgs - Gate-Source Breakdown Voltage: - 40 V
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