InterFET J109 JFET JFET N沟道 -25V 低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 40 mA

Rds On - Drain-Source Resistance: 12 Ohms

Vgs - Gate-Source Breakdown Voltage: - 25 V