InterFET J113 JFET JFET N沟道 -35V 低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 3 V

Drain-Source Current at Vgs=0: 2 mA

Rds On - Drain-Source Resistance: 100 Ohms

Vgs - Gate-Source Breakdown Voltage: - 35 V