InterFET J175 JFET P型沟道 30V 低噪声

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: 6 V

Drain-Source Current at Vgs=0: - 70 mA

Id - Continuous Drain Current: - 10 nA

Rds On - Drain-Source Resistance: 85 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: - 15 V