InterFET J210 JFET N型场效应晶体管

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 3 V

Drain-Source Current at Vgs=0: 15 mA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 4000 uS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 15 V