InterFET J231 JFET JFET N沟道 -40V 低Ciss

Technology: Si

Unit Weight: 1.720 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 5 V

Drain-Source Current at Vgs=0: 6 mA

Forward Transconductance - Min: 1500 uS

Vgs - Gate-Source Breakdown Voltage: - 40 V