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Technology: Si
Unit Weight: 123.677 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 3.6 mA
Forward Transconductance - Min: 1.3 mS
Rds On - Drain-Source Resistance: 1.5 kOhms
Vgs - Gate-Source Breakdown Voltage: - 50 V
Vds - Drain-Source Breakdown Voltage: 15 V