InterFET SMP5116 JFET P型沟道 30V 低噪声

Technology: Si

Unit Weight: 92.854 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Gate-Source Cutoff Voltage: 4 V

Drain-Source Current at Vgs=0: - 25 mA

Id - Continuous Drain Current: - 1 nA

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: - 15 V