InterFET SMPJ271 JFET P型沟道 30V 低噪声

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Gate-Source Cutoff Voltage: 4.5 V

Drain-Source Current at Vgs=0: - 50 mA

Forward Transconductance - Min: 8 mS

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: - 15 V