Technology: Si
Configuration: Single
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Breakdown Voltage: - 25 V
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Technology: Si
Configuration: Single
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Breakdown Voltage: - 25 V
直接联系认证专家