InterFET U308 JFET JFET N沟道 -25V 低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW (1/2 W)

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 60 mA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 10 mS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 10 V